Last edited by Arashisar
Sunday, October 11, 2020 | History

2 edition of Generation of intermodulation by electron tunneling through aluminum oxide films found in the catalog.

Generation of intermodulation by electron tunneling through aluminum oxide films

Clarence Dorcas Bond

Generation of intermodulation by electron tunneling through aluminum oxide films

by Clarence Dorcas Bond

  • 308 Want to read
  • 22 Currently reading

Published by [Dept. of Defense, Navy Dept., Office of Naval Research], Naval Research Laboratory in Washington .
Written in English

    Subjects:
  • Tunneling (Physics),
  • Modulation (Electronics)

  • Edition Notes

    StatementC. D. Bond, C. S. Guenzer, and C. A. Carosella, Radiation Effects Branch, Radiation Technology Division
    SeriesNRL report ; 8170, NRL report -- 8170
    ContributionsGuenzer, C. S., joint author, Carosella, C. A., joint author, Naval Research Laboratory (U.S.), Naval Research Laboratory (U.S.). Radiation Effects Branch
    The Physical Object
    Paginationiii, 25 p. :
    Number of Pages25
    ID Numbers
    Open LibraryOL14859365M

    A film of deposited on thermally grown was studied to determine the subthreshold voltage stability. Long‐term reliability results have indicated the presence of more than one mechanism causing the subthreshold degradation. The two mechanisms are identified as electron tunneling and lateral migration of the ions along the surface of the device. This book presents a unified view of the rapidly growing field of scanning tunneling microscopy and its many derivatives. After examining novel scanning-probe techniques and the instrumentation and methods, the book provides detailed accounts of STM applications.

    analysis to predict the generation of intermodulation products. Charac- "Intermodulation Generation by Electron Tunneling Through Aluminum-Oxide Film," Proc IEEE, Vol. 67, No. 12, December [6] Arazm, F., Benson, F.A., "Nonlinearities in Metal Contacts at Microwave. Variability control over the resistive switching process is one of the key requirements to improve the performance stability of the resistive random access memory (RRAM) devices. In this study, we show the improvement of the variability of the resistive switching operation in the TiOx/Al2O3 bilayer RRAM devices. The achievement is based on the thickness engineering of the Al2O3 by:

      A number of effects in metal/(tunnel-thin SiO2)/p +-Si structures associated with electron tunneling from the valence band of bulk Si into a metal have been studied. The tunneling occurs through two successively arranged tunnel-transparent barriers: that of the depleted space charge region in Si and the SiO2 barrier, with the possible intermediate involvement of a quantum well formed by the Cited by: 3. The steady-state growth results from the balance between the field-enhanced oxide dissolution at the oxide/electrolyte interface at the base of the hemispherical-shaped pores where the electric field is high enough to propel the Al 3+ ions through the barrier layer and the oxide growth at the metal/oxide interface resulting from the migration Cited by:


Share this book
You might also like
Busted

Busted

Nineteen Hats, Ten Teacups, an Empty Birdcage and the Art of Longing

Nineteen Hats, Ten Teacups, an Empty Birdcage and the Art of Longing

Taking of evidence abroad.

Taking of evidence abroad.

Proposed revision of methods and procedure [in the Motor Vehicle Division]: 1953-1955.

Proposed revision of methods and procedure [in the Motor Vehicle Division]: 1953-1955.

Biotechnology of tree improvement

Biotechnology of tree improvement

Proceedings of Research Student Supervision

Proceedings of Research Student Supervision

On growth and form

On growth and form

Day schools for young workers

Day schools for young workers

From England to Bohemia

From England to Bohemia

Order of proceedings, class and honor lists

Order of proceedings, class and honor lists

Generation of intermodulation by electron tunneling through aluminum oxide films by Clarence Dorcas Bond Download PDF EPUB FB2

Intermodulation generation by electron tunneling through aluminum-oxide films Abstract: The generation of intermodulation (IM) interference by nonlinear conduction mechanisms in normally passive hardware components can lead to severe degradation in the performance of multi-carrier communication systems in satellites, space probes, and ship-board systems.

Generation of intermodulation by electron tunneling through aluminum oxide films Author: Clarence Dorcas Bond ; C S Guenzer ; C A Carosella ; Naval Research Laboratory (U.S.) ; Naval Research Laboratory (U.S.). This report describes an investigation of the generation of RF intermodulation due to nonlinear conduction by electron tunneling through thin-film aluminum oxide junctions.

Details are presented regarding the fabrication of junctions, their current-voltage characteristics, and the measurement of intermodulation power levels. This paper describes an investigation of the generation of IM due to nonlinear conduction by electron tunneling through aluminum-oxide films.

Details are presented regarding the fabrication of Al-Al2O3-Al junctions, the current-voltage and capacitance characteristics, and the measurement of. The first book to focus on the electromagnetic basis of signal integrity.

Intermodulation Generation by Electron Tunneling Through Aluminum-Oxide Films of IM due to nonlinear conduction by. Potential means of intermodulation generation in multiplex systems are reviewed and evaluated theoretically.

The dominant mechanisms involve nonohmic junctions and ferromagnetic components. Junctions through aluminum oxide films have been studied experimentally and a possible means of improvement is by: 1. A methodology is proposed for the phenomenological modeling of passive intermodulation (PIM) generation due to electron tunneling in metallic contacts in the signal transmission path of an RF.

Abstract—This paper describes experimental studies of passive intermodulation due to metal-metal contacts. These studies cover the influence of roughness surface profile and of the thin native oxide layer on PIM value versus contact axial forces.

A complete description of a dedicated test bench used during different studies is Size: 1MB. Lecture 20 – Quantum Tunneling of Electrons 3/20/ Notes by MIT Student (and MZB) Introduction.

Until now, we have been discussing reaction rates on a somewhat phenomenological basis. In this lecture, we will become much more fundamental, and merge our analysis of reaction rates with quantum mechanics.

First, we’ll discuss the concept of File Size: KB. and dielectric breakdown [19], and electron tunneling across a potential barrier where the imposed voltage lowers the energy barrier [20]. The simple third-order model for these nonlineari-ties would have positive in (2).

When nonlinear impedances are combined with the series impedance of an external circuit, the result is a division of the. A Ti/Au bi-layer (3/22 nm) is evaporated to form the floating gates for the ALD oxide samples.

Gold is chosen, instead of aluminum, to prevent the formation of a native oxide on the floating gates prior to the deposition of the tunnel oxide barrier (Al 2 O 3) by layer deposition (ALD) is a thin film growth technique which utilizes a binary sequence of self-limiting chemical Cited by: 2.

We all make use of oxide ultrathin films, even if we are unaware of doing so. They are essential components of many common devices, such as mobile phones and laptops.

The films in these ubiquitous electronics are composed of silicon dioxide, an unsurpassed material in the design of transistors.

But oxide films at the nanoscale (typically just 10 nm or less in thickness) are integral to Cited by:   Basic concepts in tunneling spectroscopy applied to molecular systems are presented. Junctions of the form M-A-M, M-I-A-M, and M-I-A-I?-M, where A is an active molecular layer, are considered.

Inelastic electron tunneling spectroscopy (IETS) is found to be readily applied to all the above device by: 3. A commercial organic barrier layer is deposited by spin coating. Its thickness is μm. Over this layer an aluminum oxide, Al 2 O 3 layer is formed by atomic layer deposition (ALD).

The Al 2 O 3 film has a thickness of 30 nm. Thus we have the composite structure: Glass/PEN/(organic layer + Al 2 O 3). Exploring Two‐Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next‐Generation, High‐Performance, Thin‐Film Transistor Technologies John G.

Labram Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London, SW7 2BW UK. The parameters A and B depend on the tunneling barrier height ϕ b and the effective mass of the tunneling electron m ox in the oxide. A and B, can be derived from the experimental IV characteristics plotted as ln (J/E 2) vs.

1/E, a so-called F-N by: 7. Inelastic Electron Tunneling Spectroscopy (IETS) is a new technique for measuring the vibrational spectrum of minute quantities of organic compounds.

Inelastic electron tunneling through 10 ton seconds. Simonsen and Coleman [33, 34] carried the technique of vapor doping of less volatile molecules to the present state of the art with their Cited by: described in this report is specifically concerned with the generation of intermodulation due to the non-linear conduction by electrons tunneling through thin oxide films, particularly A on aluminum structures.

The detailed mechanisms of surface-to-surface Cited by: 1. The amorphous aluminum oxide submonolayers prepd. on nanocryst. 2 μm thick TiO2 anatase film were characterized by high-resoln. transmission electron microscopy.

Time-of-flight elastic recoil detection method was employed to study the growth of similar aluminum oxide layers on planar anatase : Wolf-Dietrich Zabka, Tiziana Musso, Mathias Mosberger, Zbynek Novotny, Roberta Totani, Marcella Iann.

F) traverse the developing oxide film (with a band gap of E g) by either tunneling or thermionic emission to acceptor levels (φ a) of oxygen species, thereby, forming different types of anions (O2− 2,O − 2,O 2,O−) on the oxide surface.

The negative anions and the positive counterpart at the metal-oxide interface generate an electric. If SiO 2 gate dielectric thickness is reduced below nm, the resulting high gate leakage current levels due to electron tunneling effects become unacceptable for device reliability [1,2].The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor technology required the replacement of SiO 2 with gate dielectrics that have a high dielectric constant (high-k) [3,4].Cited by: The third-generation Al–Li alloy AA was initially introduced by Alcoa in The beneficial effects of alloying aluminum with Li are increased stiffness and decreased density that has made this alloy an appropriate candidate for the use in aerospace applications [1,2,3,4].While there have been numerous studies focused on the corrosion properties of Al and its alloys, the Cited by: 1.We present a new surface structure-dependent cold cathode material capable of sustaining high electron emission current suitable for next-generation low turn-on field-emission devices.

The low turn-on electric field for electron emission in the cathode materials is critical, which facilitates the low-power room-temperature operation, a key factor required by the industrial : Ishpal Rawal, Lalit Kumar, Ravi Kant Tripathi, Omvir Singh Panwar.